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AssigneesKwansei Gakuin Educational Foundation, Toyota Tsusho Corporation
InventorsTadaaki KANEKO, Daichi DOJIMA, Kohei TODA, Jun SASAKI, Kiyoshi KOJIMA
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An object of the present invention is to provide a novel technique for uniformizing a carrier concentration of an epitaxial layer. The present invention is a method for uniformizing the carrier concentration of an epitaxial layer, the method including a growth step S10 of growing the epitaxial layer 20 under an equilibrium vapor pressure environment on the bulk layer 10. As described above, including the growth step S10 of growing the epitaxial layer 20 under an equilibrium vapor pressure environment can suppress the variation in the carrier concentration in the epitaxial layer 20.
A method for uniformizing a carrier concentration of an epitaxial layer, the method comprising a growth step of growing an epitaxial layer on a bulk layer under an equilibrium vapor pressure environment.
A semiconductor substrate comprising an epitaxial layer having a coefficient of variation of carrier concentration of 0.05 or less.
A semiconductor substrate comprising an epitaxial layer having a standard deviation of the carrier concentration of 1×1017 cm−3 or less.
Dependencies are inferred from the claim text.