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US 2024/0405075 A1Published application
Semiconductor devices having counter-doped structures
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHsiao-Chun CHANG, Guan-Jie SHEN
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Abstract
The present disclosure describes semiconductor devices and methods for forming the same. A semiconductor device includes nanostructures over a substrate and a source/drain region in contact with the nanostructures. The source/drain region is doped with a first-type dopant. The semiconductor device also includes a counter-doped structure in contact with the substrate and the source/drain region. The counter-doped structure is doped with a second-type dopant opposite to the first-type dopant.
Claims20
A method, comprising:
- depositing a counter-doped layer on a substrate;
- doping the counter-doped layer with a first-type dopant;
- depositing first and second groups of semiconductor layers on the counter-doped layer to form a stack of alternating semiconductor layers;
- forming a plurality of spacers on sidewalls of the first group of semiconductor layers;
- forming a source/drain structure in contact with the counter-doped layer and the plurality of spacers;
- doping the source/drain structure with a second-type dopant opposite to the first-type dopant;
- removing the first group of semiconductor layers;
- and
- removing a portion of the counter-doped layer to form a counter-doped structure under the source/drain structure.
6 more elements
A method, comprising:
- forming a semiconductor layer on a substrate, wherein the semiconductor layer is doped with a first-type dopant;
- forming a first nanostructure on a first portion of the semiconductor layer;
- forming a second nanostructure on the first nanostructure;
- epitaxially growing a source/drain (S/D) structure on a second portion of the semiconductor layer and adjacent to the second of nanostructure, wherein the S/D structure is doped with a second-type dopant opposite to the first-type dopant;
- removing the first nanostructure and the first portion of the semiconductor layer;
- and
- forming a gate structure on the substrate and surrounding the second nanostructure.
4 more elements
A method, comprising:
- forming a doped semiconductor layer on a substrate, wherein the doped semiconductor layer comprises a first-type dopant;
- forming first and second groups of nanostructures alternatingly stacked on the doped semiconductor layer, wherein a bottom most nanostructure of the first group of nanostructures is in contact with the doped semiconductor layer;
- forming a source/drain (S/D) structure on the doped semiconductor layer and in contact with the second group of nanostructures, wherein the S/D structure comprises a second-type dopant;
- and
- replacing the first group of nanostructures and a portion of the doped semiconductor layer with a gate structure surrounding the second group of nanostructures.
2 more elements
Dependencies are inferred from the claim text.