Semiconductor device
AssigneeRohm Co., Ltd.
InventorYuji KOGA
Life of this patent
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Abstract
A semiconductor device includes a semiconductor layer having a first surface and a second surface at an opposite side thereto, a bottom gate region of a first conductivity type that is formed in the semiconductor layer, and a top gate region of the first conductivity type that is formed in a surface layer portion of the first surface of the semiconductor layer and faces the bottom gate region in a thickness direction of the semiconductor layer, the bottom gate region includes a first bottom gate region at the source region side and a second bottom gate region at the drain region side, and an interval in the thickness direction between the second bottom gate region and the top gate region is greater than an interval in the thickness direction between the first bottom gate region and the top gate region.
Claims12
A semiconductor device comprising:
- a semiconductor layer having a first surface;
- a bottom gate region of a first conductivity type that is formed in the semiconductor layer;
- a top gate region of the first conductivity type that is formed in a surface layer portion of the first surface of the semiconductor layer and faces the bottom gate region in a thickness direction of the semiconductor layer;
- a source region of a second conductivity type that is formed in a surface layer portion of the first surface of the semiconductor layer and is separated from the top gate region in a direction along the first surface;
- a drain region of the second conductivity type that is formed in a surface layer portion of the first surface of the semiconductor layer and is separated to an opposite side of the source region from the top gate region in the direction along the first surface;
- and
- a channel region of the second conductivity type that is formed between the source region and the drain region in a direction along the first surface and is formed between the bottom gate region and the top gate region in the thickness direction of the semiconductor layer;
- and
- wherein the bottom gate region includes a first bottom gate region at the source region side and a second bottom gate region at the drain region side and
- an interval in the thickness direction between the second bottom gate region and the top gate region is greater than an interval in the thickness direction between the first bottom gate region and the top gate region.
Dependencies are inferred from the claim text.