US 2024/0405072 A1 · SiC SEMICONDUCTOR DEVICE

Abstract

An SiC semiconductor device includes an SiC semiconductor layer having a first main surface and a second main surface, a gate electrode embedded in a trench with a gate insulating layer, a source region of a first conductivity type formed in a side of the trench in a surface layer portion of the first main surface, a body region of a second conductivity type formed in a region at the second main surface side with respect to the source region in the surface layer portion of the first main surface, a drift region of the first conductivity type formed in a region at the second main surface side in the SiC semiconductor layer, and a contact region of the second conductivity type having an impurity concentration of not more than 1.0×1020 cm−3 and formed in the surface layer portion of the first main surface.

Claims20

Dependent claims

An SiC semiconductor device comprising:

an SiC semiconductor layer that has a first main surface on one side and a second main surface on the other side;
a mesa that is defined on a first main surface side by an active surface, an outer surface recessed toward a second main surface side with respect to the active surface outside the active surface, and a side wall connecting the active surface and the outer surface;
an interlayer insulating layer that has a first portion arranged on the active surface, a second portion arranged on the outer surface, and a third portion arranged along the side wall and inclined obliquely from the first portion to the second portion;
and
an organic insulating layer that is arranged on the interlayer insulating layer so as to cover the first portion, the second portion, and the third portion of the interlayer insulating layer.

2 more elements

Dependencies are inferred from the claim text.

SiC SEMICONDUCTOR DEVICE

Life of this patent

SiC SEMICONDUCTOR DEVICE

Life of this patent

Abstract

Claims20