Transistor source/drain regions
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsWei-Min Liu, Li-Li Su, Yee-Chia Yeo
Life of this patent
Estimating the term…
Abstract
In an embodiment, a device includes: a first nanostructure; a source/drain region adjoining a first channel region of the first nanostructure, the source/drain region including: a main layer; and a first liner layer between the main layer and the first nanostructure, a carbon concentration of the first liner layer being greater than a carbon concentration of the main layer; an inter-layer dielectric on the source/drain region; and a contact extending through the inter-layer dielectric, the contact connected to the main layer, the contact spaced apart from the first liner layer.
Claims20
A device comprising:
- a first nanostructure;
- a source/drain region adjoining a first channel region of the first nanostructure, the source/drain region comprising:
- a main layer;
- and
- a first liner layer between the main layer and the first nanostructure, a carbon concentration of the first liner layer being greater than a carbon concentration of the main layer;
- an inter-layer dielectric on the source/drain region;
- and
- a contact extending through the inter-layer dielectric, the contact connected to the main layer, the contact spaced apart from the first liner layer.
A device comprising:
- a nanostructure;
- and
- a source/drain region adjoining a channel region of the nanostructure, the source/drain region comprising:
- a first epitaxial layer on a sidewall of the nanostructure, the first epitaxial layer comprising a carbon-containing semiconductor material and an n-type dopant;
- a second epitaxial layer on the first epitaxial layer, the second epitaxial layer comprising a carbon-free semiconductor material and the n-type dopant;
- and
- a third epitaxial layer on the second epitaxial layer, the third epitaxial layer comprising the carbon-free semiconductor material and the n-type dopant.
A device comprising:
- a source/drain region comprising:
- a first epitaxial layer, the first epitaxial layer comprising a first semiconductor material, the first semiconductor material comprising a semiconductor element and a blocker element;
- and
- a second epitaxial layer on the first epitaxial layer, the second epitaxial layer comprising a second semiconductor material and an n-type dopant, the first semiconductor material having a greater concentration of the blocker element than the second semiconductor material, the second epitaxial layer having a greater concentration of the n-type dopant than the first epitaxial layer;
- and
- a nanostructure adjacent the first epitaxial layer of the source/drain region;
- a gate structure around the nanostructure;
- and
- a spacer between the gate structure and the source/drain region.
Dependencies are inferred from the claim text.