Semiconductor Device and Method of Forming MEMS Super-Junction Metal Oxide Semiconductor Using Epitaxial Layer

A method of making a semiconductor device, comprising:

• providing a substrate;
• forming a semiconductor layer over the substrate;
• forming a trench through the semiconductor layer;
• forming an epitaxial layer over a surface of the semiconductor layer and a side surface of the trench;
• and
• diffusing the epitaxial layer into the semiconductor layer to form a first column of semiconductor material within the semiconductor layer.

A semiconductor device, comprising:

• a substrate;
• a semiconductor layer formed over the substrate;
• a trench formed through the semiconductor layer;
• and
• an epitaxial layer formed over a surface of the semiconductor layer and a side surface of the trench and diffused into the semiconductor layer.

A method of making a semiconductor device, comprising:

• providing a substrate;
• forming a semiconductor layer over the substrate;
• forming a trench through the semiconductor layer;
• forming an epitaxial layer over a surface of the semiconductor layer and a side surface of the trench using atomic layer deposition;
• and
• diffusing the epitaxial layer into the semiconductor layer to form a first column of semiconductor material within the semiconductor layer.