Semiconductor Device and Method of Forming MEMS Super-Junction Metal Oxide Semiconductor Using Vapor Phase Deposition

A method of making a semiconductor device, comprising:

• providing a substrate;
• forming a semiconductor layer over the substrate;
• forming a trench through the semiconductor layer;
• depositing a semiconductor material over a side surface of the trench by vapor phase deposition or plasma doping;
• and
• diffusing the semiconductor material into the semiconductor layer.

A semiconductor device, comprising:

• a substrate;
• a semiconductor layer formed over the substrate;
• a trench formed through the semiconductor layer;
• and
• a semiconductor material deposited over a side surface of the trench by vapor phase deposition or plasma doping and diffused into the semiconductor layer.

A method of making a semiconductor device using atomic layer deposition, comprising:

• providing a substrate;
• forming a semiconductor layer over the substrate;
• forming a trench through the semiconductor layer;
• depositing a semiconductor material over a side surface of the trench using atomic layer deposition;
• and
• diffusing the semiconductor material into the semiconductor layer.