Semiconductor device and manufacture method of thereof

A method of manufacturing a semiconductor device, comprising:

• providing a substrate, wherein the substrate comprises a base material and an epitaxial layer on the base material;
• forming a first conductive type lightly doped region in the epitaxial layer;
• forming a plurality of first conductive type heavily doped regions and a second conductive type heavily doped region in the epitaxial layer on the first conductive type lightly doped region, wherein the plurality of first conductive type heavily doped regions neighboring to each other are spaced apart by the second conductive type heavily doped region;
• forming a trench extending into the second conductive type heavily doped region, the first conductive type lightly doped region and the epitaxial layer;
• disposing a mask filling the trench, wherein a top surface of the mask is higher than a top surface of the second conductive type heavily doped region;
• disposing a spacer on a sidewall of the mask;
• doping a first conductive type dopant in the first conductive type lightly doped region, thereby forming an anti-breakdown region;
• and
• removing the mask and the spacer to expose the trench.

A semiconductor device, comprising:

• a substrate, comprising a base material and an epitaxial layer on the base material;
• a first conductive type lightly doped region disposed on the epitaxial layer;
• an anti-breakdown region disposed in the first conductive type lightly doped region, wherein a bottom surface of the anti-breakdown region and a lateral surface of the anti-breakdown region neighboring to the bottom surface directly contact the first conductive type lightly doped region, wherein a concentration of a first conductive type dopant in the anti-breakdown region is higher than a concentration of the first conductive type dopant in the first conductive type lightly doped region;
• a plurality of second conductive type heavily doped regions neighboring to the first conductive type lightly doped region and the anti-breakdown region, wherein the plurality of second conductive type heavily doped regions neighboring to each other are spaced apart by a trench, and the trench extends from a position between the plurality of second conductive type heavily doped regions to the first conductive type lightly doped region and the epitaxial layer, making the first conductive type lightly doped region be located between the anti-breakdown region and the trench;
• and
• a plurality of first conductive type heavily doped regions, wherein each of the plurality of first conductive type heavily doped regions is neighboring to each of the plurality of second conductive type heavily doped regions.