Semiconductor structure, manufacturing method thereof, and light-emitting device

A manufacturing method of a semiconductor structure, comprising:

• S1:
• providing a substrate comprising a support substrate layer, an etching stop layer, and a growth substrate layer stacked in sequence;
• S2:
• forming a light-emitting structure on the growth substrate layer, wherein the light-emitting structure comprises a plurality of light-emitting units, and an insulating structure is disposed between adjacent two light-emitting units;
• S3:
• etching the substrate from a side, away from the growth substrate layer, to the etching stop layer;
• and
• S4:
• forming a light-control layer by forming a plurality of light-control regions regularly disposed in the etching stop layer and the growth substrate layer, wherein the light-control layer further comprises a substrate structure disposed between adjacent two light-control regions, and the substrate structure comprises the growth substrate layer structure and the etching stop layer structure stacked along a direction away from the light-emitting structure, and one light-control region corresponds to at least one light-emitting unit.