Image sensor

An image sensor comprising:

• a first pixel;
• and
• a second pixel,
• wherein each of the first and second pixels includes a substrate including a photoelectric conversion region and a floating diffusion region, a semiconductor pattern on the substrate, a gate electrode on the semiconductor pattern, and a gate insulating layer between the semiconductor pattern and the gate electrode,
• the semiconductor pattern of each of the first and second pixels includes a first sub pattern including a first source/drain region, a second sub pattern including a second source/drain region, and a third sub pattern between the first sub pattern and the second sub pattern,
• the first sub pattern, the second sub pattern, and the third sub pattern extend in different directions,
• the gate electrode is on a side of the third sub pattern,
• the floating diffusion region of the first and second pixels are electrically connected respectively to the gate electrode of the first pixel and the gate electrode of the second pixel.