Back to results
US 2024/0405040 A1Published application
Semiconductor device
AssigneeSamsung Electronics Co., Ltd.
InventorsSeonghoon Ko, Jae Ho Kim, Wook Lee
Life of this patent
Estimating the term…
Abstract
The present disclosure relates to semiconductor device. One example semiconductor device includes a plurality of unit pixels, where each unit pixel of the plurality of unit pixels includes a pair of transfer gates including a first transfer gate and a second transfer gate, a photoelectric converter, and a floating diffusion region spaced apart from the photoelectric converter. The first transfer gate and the second transfer gate are disposed asymmetrically with respect to the photoelectric converter and the floating diffusion region.
Claims20
A semiconductor device including a plurality of unit pixels, wherein
- each unit pixel of the plurality of unit pixels comprises:
- a pair of transfer gates including a first transfer gate and a second transfer gate;
- a photoelectric converter;
- and
- a floating diffusion region spaced apart from the photoelectric converter,
- wherein the first transfer gate and the second transfer gate are disposed asymmetrically with respect to the photoelectric converter and the floating diffusion region.
3 more elements
A semiconductor device, comprising:
- a first substrate having a first surface and a second surface opposite to the first surface, and including a pixel array region and an edge region, wherein the pixel array region includes a plurality of unit pixels;
- an anti-reflection structure disposed on the second surface;
- a pixel separator disposed on the first substrate to separate the plurality of unit pixels;
- a color filter disposed on the anti-reflection structure;
- a micro lens array disposed on the color filter;
- a first interlayer insulating layer disposed on the first surface of the first substrate;
- a first wiring layer disposed within the first interlayer insulating layer;
- a second interlayer insulating layer disposed under the first interlayer insulating layer;
- a second wiring layer disposed within the second interlayer insulating layer;
- and
- a second substrate disposed under the second interlayer insulating layer,
- wherein each unit pixel of the plurality of unit pixels comprises:
- a pair of transfer gates including a first transfer gate and a second transfer gate;
- a photoelectric converter;
- and
- a floating diffusion region spaced apart from the photoelectric converter,
- wherein the first transfer gate and the second transfer gate are disposed asymmetrically with respect to the photoelectric converter and the floating diffusion region.
14 more elements
A semiconductor device, comprising:
- a first sub-chip, the first sub-chip comprising
- a first substrate having a first surface and a second surface opposite to the first surface, wherein the first substrate includes a plurality of unit pixel array regions and an edge region,
- an anti-reflection structure disposed on the second surface,
- a pixel separator disposed on the first substrate to separate a plurality of unit pixels,
- a color filter disposed on the anti-reflection structure,
- a micro lens array disposed on the color filter,
- a first interlayer insulating layer disposed on the first surface of the first substrate, and
- a first wiring layer disposed within the first interlayer insulating layer;
- a second sub-chip, the second sub-chip comprising
- a second substrate disposed under the first interlayer insulating layer,
- a second interlayer insulating layer disposed under the second substrate, and
- a second wiring layer disposed within the second interlayer insulating layer;
- and
- a third sub-chip, the third sub-chip comprising
- a third interlayer insulating layer disposed under the second interlayer insulating layer,
- a third wiring layer disposed within the third interlayer insulating layer, and
- a third substrate disposed under the third interlayer insulating layer,
- wherein each unit pixel of the plurality of unit pixels comprises a pair of transfer gates including a first transfer gate and a second transfer gate;
- a photoelectric converter, and
- a floating diffusion region spaced apart from the photoelectric converter,
- wherein the first transfer gate and the second transfer gate are disposed asymmetrically with respect to the photoelectric converter and the floating diffusion region.
18 more elements
Dependencies are inferred from the claim text.