Image sensor and manufaturing method thereof

An image sensor comprising:

• a first substrate, wherein the first substrate includes a first side, a second side, and a photoelectric conversion area, the first side and the second side of the first substrate facing each other;
• a light transmission layer disposed on the second side of the first substrate;
• a transmission transistor disposed on the first side of the first substrate;
• a first wiring area disposed on the first side of the first substrate;
• a second substrate, wherein the second substrate includes a first side and a second side facing each other;
• a plurality of transistors disposed on the first side of the second substrate, wherein the plurality of transistors are connected with the transmission transistor;
• a second wiring area disposed on the second substrate;
• a third wiring area disposed on the second side of the second substrate;
• and
• a deep node, wherein the deep node penetrates the second substrate,
• wherein the first side of the first substrate and the first side of the second substrate face each other, and
• wherein part of a plurality of wirings disposed in the second wiring area and part of a plurality of wirings disposed in the third wiring area are connected through the deep node.

A manufacturing method of an image sensor, comprising:

• preparing a first substrate, wherein the first substrate includes a first side, a second side, and a transmission transistor, the first side and the second side of the first substrate facing each other and a first wiring area disposed on the first side of the first substrate;
• preparing a second substrate, wherein the second substrate includes a first side, a second side, and a plurality of transistors, the first side and the second side of the second substrate facing each other and a second wiring area disposed on the first side of the second substrate;
• bonding the first substrate and the second substrate such that the first side of the first substrate and the first side of the second substrate face each other;
• forming a deep node, wherein the deep node penetrates the second substrate in a direction facing the first side of the second substrate from the second side of the second substrate;
• and
• forming a third wiring area on the second side of the second substrate,
• wherein part of a plurality of wirings disposed in the second wiring area and part of a plurality of wirings disposed in the third wiring area connected with each other through the deep node.