US 2024/0405020 A1 · SEMICONDUCTOR DEVICES

Abstract

A semiconductor device includes a first region and a second region disposed adjacent to each other and having a boundary therebetween. The first region includes a first active region, a second active region and a third active region extending in a first direction and having different widths measured along a second direction. The first region includes a first gate electrode, a second gate electrode and a third gate electrode extending in the second direction and disposed across the first active region, the second active region and the third active region respectively. From a top view, the first active region has a first edge and a second edge opposite to each other, the first edge of the first active region is aligned with an edge of the second active region, and the second edge of the first active region is aligned with an edge of the third active region.

Claims20

Dependent claims

A semiconductor device, comprising:

a first region and a second region disposed adjacent to each other and having a boundary therebetween,
wherein the first region comprises:
a first active region, a second active region and a third active region extending in a first direction and having different widths measured along a second direction different from the first direction;
and
a first gate electrode, a second gate electrode and a third gate electrode extending in the second direction and disposed across the first active region, the second active region and the third active region respectively,
wherein from a top view, the first active region has a first edge and a second edge opposite to each other, the first edge of the first active region is aligned with an edge of the second active region, and the second edge of the first active region is aligned with an edge of the third active region.

3 more elements

A semiconductor device, comprising:

a first region and a second region disposed adjacent to each other and having a boundary therebetween, wherein the first region comprises:
a first active region, a second active region and a third active region extending in a first direction;
a first gate electrode, a second gate electrode and a third gate electrode extending in a second direction and disposed across the first active region, the second active region and the third active region respectively;
and
a first metal contact, a second metal contact and a third metal contact extending in the second direction and across the first active region, the second active region and the third active region respectively,
wherein the first active region, the second active region and the third active region have a first width, a second width and a third width measured along the second direction respectively,
wherein the first metal contact, the second metal contact and the third metal contact have a first length, a second length and a third length measured along the second direction respectively, and
wherein the first width is greater than the second width or the third width, the first length is greater than the third length, and the third length is greater than the second length.

5 more elements

Dependencies are inferred from the claim text.

Semiconductor devices

Life of this patent

Semiconductor devices

Life of this patent

Abstract

Claims20