Integrated boot diode with high forward bias capability

A method of forming a microelectronic device, comprising:

• forming a body region in a semiconductor material of a substrate, the body region having a first conductivity type;
• forming a drain drift region in a semiconductor material of a substrate, the drain drift region having a second conductivity type;
• forming a field relief dielectric layer over the drain drift region;
• forming a charge balance layer under the field relief dielectric layer which is electrically isolated from the body region and is electrically in contact with the substrate;
• forming a gate dielectric layer over the body region, the gate dielectric layer having a thickness less than the field relief dielectric layer;
• the gate dielectric layer extending over a junction between the body region and the drain drift region;
• forming a gate electrode over the gate dielectric layer;
• forming a source region having the second conductivity type contacting the body region, the source region having an average dopant density greater than the average dopant density of the body region;
• forming a drain region having the second conductivity type contacting the drain drift region, the drain region having an average dopant density greater than the average dopant density of the drain drift region;
• and
• forming a body contact region having a first conductivity type, the body contact region in direct contact with the body region and having a dopant density at least twice the body region.