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US 2024/0405016 A1Published application
Semiconductor module
AssigneeRohm Co., Ltd.
InventorShinya UMEKI
Life of this patent
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Abstract
A semiconductor module includes an IGBT device, and a MISFET device that composes a parallel circuit together with the IGBT device. The semiconductor module generates a drain current of the MISFET device in a voltage range less than a built-in voltage of the IGBT device and generates a collector current of the IGBT device and a drain current of the MISFET device in a voltage range equal to or more than the built-in voltage.
Claims17
A semiconductor module comprising:
- an IGBT device;
- and
- a MISFET device that composes a parallel circuit together with the IGBT device;
- wherein a drain current of the MISFET device is to be generated in a voltage range less than a built-in voltage of the IGBT device, and a collector current of the IGBT device and a drain current of the MISFET device are to be generated in a voltage range equal to or more than the built-in voltage.
1 more element
Dependencies are inferred from the claim text.