Semiconductor device with esd protection structure and method of making same
AssigneeHeFeChip Corporation Limited
InventorGeeng-Chuan CHERN
Life of this patent
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Abstract
A semiconductor device with ESD protection structure and a method of making it are disclosed. The semiconductor device with ESD protection structure includes at least one gate and source and drain regions on opposite sides of the at least one gate that constitute at least a discharging MOSFET. The gate includes first gate portions having a first dopant concentration and a second gate portion having a second dopant concentration. The first dopant concentration is lower than the second dopant concentration. The at least one first gate portions are lower portions of the gate above the edges of an active area, and the second gate portion is the remaining portion of the at least one gate other than the first gate portions.
Claims16
A method of making a semiconductor device with ESD protection structure, comprising:
- providing a substrate;
- forming, in the substrate, at least one first trench isolation and at least one active area surrounded by the at least one first trench isolation;
- forming at least one gate over the substrate, wherein the at least one gate spans over the at least one active area and overlaps the at least one first trench isolation on both ends thereof;
- forming a first mask layer over the substrate, wherein the first mask layer covers portions of the at least one gate located above edges of the at least one active area;
- and
- performing a high-dose ion implantation process using the first mask layer as a block layer, followed by an annealing process, to form, in the at least one gate, first gate portions having a first dopant concentration and a second gate portion having a second dopant concentration, wherein the first gate portions are lower portions of the at least one gate located above the edges of the at least one active area, wherein the second gate portion is a remaining portion of the at least one gate other than the first gate portions, and wherein the high-dose ion implantation process also results in a source region and a drain region are formed in the at least one active area on opposite sides of the at least one gate.
A semiconductor device with ESD protection structure, comprising:
- a substrate;
- at least one first trench isolation formed in the substrate, wherein the at least one first trench isolation surrounds at least one active area;
- at least one gate spanning over the at least one active area and overlapping the at least one first trench isolation on both ends thereof, wherein the at least one gate comprises first gate portions having a first dopant concentration and a second gate portion having a second dopant concentration, wherein the first gate portions are lower portions of the at least one gate located above the edges of the at least one active area, and wherein the second gate portion is a remaining portion of the at least one gate other than the first gate portion;
- and
- a source region and a drain region, which are formed in the at least one active area on opposite sides of the at least one gate, wherein the at least one gate and the source region are coupled to a first node, and wherein the drain region is coupled to a second node.
Dependencies are inferred from the claim text.