Semiconductor device including cross-die bonding ring and methods for forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChen-Shien Chen, Chih-Hong Wang, Ting Hao Kuo, Yu-Chia Lai
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Abstract
A semiconductor die includes lower dies separated by a dielectric region; a cross die vertically stacked on the lower dies and the dielectric region; a molding structure filling the dielectric region and surrounding side surfaces of the lower dies and the cross die; and a bonding ring connecting the cross die to the lower dies and including: an upper metal ring formed in a bottom surface of the cross die; and a lower metal ring formed in top surfaces of the lower dies and extending through the molding structure in the dielectric region. The lower metal ring is bonded to the upper metal ring.
Claims20
A semiconductor device comprising:
- at least two lower dies separated by a dielectric region;
- a cross die vertically stacked on the at least two lower dies and the dielectric region;
- a molding structure filling the dielectric region and laterally surrounding side surfaces of the at least two lower dies and the cross die;
- and
- a bonding ring connecting the cross die to the at least two lower dies, the bonding ring comprising:
- an upper metal ring formed in a bottom surface of the cross die;
- and
- a lower metal ring formed in top surfaces of the at least two lower dies and extending through the molding structure in the dielectric region, wherein the lower metal ring is bonded to the upper metal ring.
A semiconductor device comprising:
- two lower dies separated by a dielectric region;
- a cross die vertically stacked on the two lower dies and the dielectric region;
- a lower dielectric layer filling the dielectric region and laterally surrounding side surfaces of the at least two lower dies;
- an upper dielectric layer laterally surrounding side surfaces of the cross die;
- a bonding ring formed in a bottom surface of the cross die, top surfaces of the two lower dies, and a top surface of the lower dielectric layer in the dielectric region, so as to connect the cross die to the two lower dies;
- and
- bonding lines disposed inside of the bonding ring and connecting the cross die to the two lower dies,
- wherein a portion of the bonding ring is disposed in the lower dielectric layer and extends across the dielectric region.
A semiconductor device comprising:
- lower dies separated by a dielectric region;
- a cross die vertically stacked on the lower dies and the dielectric region;
- a molding structure filling the dielectric region and surrounding side surfaces of the lower dies and the cross die;
- a first bonding ring connecting the cross die to the lower dies;
- and
- a second bonding ring connecting the cross die to the lower dies,
- wherein:
- the first bonding ring and the second bonding ring are disposed on opposing sides of the dielectric region;
- or
- the first bonding ring and the second bonding ring are disposed within the dielectric region and do not vertically overlap with the lower dies.
Dependencies are inferred from the claim text.