Processed stacked dies
AssigneeAdeia Semiconductor Bonding Technologies Inc.
InventorsCyprian Emeka Uzoh, Guilian Gao, Laura Wills Mirkarimi, Gaius Gillman Fountain, JR.
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Abstract
Representative implementations of techniques and methods include processing singulated dies in preparation for bonding. A plurality of semiconductor die components may be singulated from a wafer component, the semiconductor die components each having a substantially planar surface. Particles and shards of material may be removed from edges of the plurality of semiconductor die component. Additionally, one or more of the plurality of semiconductor die components may be bonded to a prepared bonding surface, via the substantially planar surface.
Claims11
A bonded structure, comprising:
- a first element comprising a first semiconductor element and a first dielectric layer, wherein the first dielectric layer comprises a first direct bonding surface;
- and
- a second singulated element comprising a second semiconductor element and a second dielectric layer without embedded conductive layers, the second dielectric layer disposed on the second semiconductor element, wherein the second dielectric layer comprises a second direct bonding surface, the second direct bonding surface directly bonded to the first direct bonding surface without an adhesive;
- wherein an upper surface of the second singulated element is recessed such that an area of a bonded portion of the upper surface of the second singulated element is less than an area of a cross-section of the widest portion of the second singulated element.
Dependencies are inferred from the claim text.