Power semiconductor module having a metallic clip with ultrasonically welded contact regions and method of producing the power semiconductor module
OwnerMarian Sebastian Broll, Daniel Obermeier +1inventors
InventorsMarian Sebastian Broll, Daniel Obermeier, Florian Alexander Biermann
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Abstract
A power semiconductor module includes: a first substrate; a first power semiconductor die attached to the first substrate; and a first metallic clip having a plurality of first contact regions ultrasonically welded to either a first metallic region of the first substrate or a first metallic region of the first power semiconductor die. The first contact regions of the first metallic clip are laterally separated from one another by a first gap in the first metallic clip. Additional power semiconductor module embodiments and corresponding methods of production are also described herein.
Claims20
A power semiconductor module, comprising:
- a first substrate;
- a first power semiconductor die attached to the first substrate;
- and
- a first metallic clip having a plurality of first contact regions ultrasonically welded to either a first metallic region of the first substrate or a first metallic region of the first power semiconductor die,
- wherein the first contact regions of the first metallic clip are laterally separated from one another by a first gap in the first metallic clip.
A power semiconductor module, comprising:
- a first substrate;
- a second substrate;
- a plurality of first power semiconductor dies attached to a first metallic region of the first substrate;
- a plurality of second power semiconductor dies attached to a first metallic region of the second substrate;
- a first metallic clip having a plurality of first contact regions ultrasonically welded to a first metallic region of each of the first power semiconductor dies;
- and
- a second metallic clip having a plurality of first contact regions ultrasonically welded to the first metallic region of the first substrate and a plurality of second contact regions ultrasonically welded to a first metallic region of each of the second power semiconductor dies,
- wherein each group of the first contact regions of the first metallic clip ultrasonically welded to the first metallic region of the same first power semiconductor die are laterally separated from one another by a first gap in the first metallic clip,
- wherein the first contact regions of the second metallic clip are laterally separated from one another by a first gap in the second metallic clip,
- wherein each group of the second contact regions of the second metallic clip ultrasonically welded to the first metallic region of the same second power semiconductor die are laterally separated from one another by a second gap in the second metallic clip.
A method of producing a power semiconductor module, the method comprising:
- attaching a first power semiconductor die to a first substrate;
- placing a first metallic clip over the first substrate, the first metallic clip having a plurality of first contact regions laterally separated from one another by a first gap in the first metallic clip;
- and
- ultrasonically welding the first contact regions of the first metallic clip to either a first metallic region of the first substrate or a first metallic region of the first power semiconductor die.
Dependencies are inferred from the claim text.