Semiconductor package and method of manufacturing the same

A method of manufacturing a semiconductor package, comprising:

• forming a first device layer that comprises a first die, a first pad on the first die and a first molding portion surrounding the first die, the first molding portion at least partially covering an active surface of the first die and surrounding the first pad on the active surface of the first die, the first die comprises a first via penetrating the first die and being exposed near an inactive surface of the first die;
• forming a second device layer that comprises a second die, a second pad on the second die and a second molding portion surrounding the second die, the second molding portion at least partially covering an active surface of the second die and surrounding the second pad on the active surface of the second die, the second die comprising a second via penetrating the second die and being exposed near an inactive surface of the second die;
• bonding the first device layer to a first redistribution substrate such that the first pad is coupled to the first redistribution substrate;
• stacking the second device layer on the first device layer;
• forming a penetration electrode to penetrate the first and second molding portions in a region around the first and second dies and to be coupled to the first redistribution substrate;
• and
• forming a second redistribution substrate on the second device layer,
• wherein the second pad of the second device layer is between the first die of the first device layer and the second die of the second device layer, and
• wherein, at an interface of the first device layer and the second device layer, the first via of the first device layer and the second pad of the second device layer are formed of the same material to form a single body or structure.