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US 2024/0404922 A1Published application
Method of making metal substrates with structures formed therein
AssigneeLux Semiconductors, Inc.
InventorsChad B. MOORE, Graeme F. HOUSSER, Shane T. McMAHON
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Abstract
A method of forming In-Substrate Structures (ISS) and isolation regions, including, but not limited to Through Metal Vias (TMV), Dielectric Isolation Vias (DIV), and Dielectric Isolation Pockets (DIP) in a metal substrate to provide enhanced operations for semiconductor packages incorporating a metal substrate.
Claims20
A method of forming in-substrate structures in a substrate body consisting of metal, the method comprising:
- forming shapes partially into a front side of the metal substrate body;
- filling the formed shapes with a dielectric material;
- and
- removing a back side of the metal substrate body until a deepest dielectric material is exposed.
1 more element
A method of forming in-substrate structures in a substrate body consisting of metal, the method comprising:
- forming at least one shape partially into a front side of the metal substrate body to a predetermined depth;
- filling the at least one formed shape with a dielectric material;
- forming at least one shape partially into a back side of the metal substrate body to a predetermined depth in alignment with the at least one shape formed in the front side of the metal substrate body to meet the at least one shape formed into the front side of the metal substrate;
- and
- filling the at least one formed shape formed partially into the back side of the metal substrate body to form at least one respective in-substrate structure through the metal substrate body.
2 more elements
Dependencies are inferred from the claim text.