Semiconductor device
AssigneeFuji Electric Co., Ltd.
InventorShingo HAYASHI
Life of this patent
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Abstract
A semiconductor device includes an active region, which is a region where main current flows, an edge termination region surrounding the active region, a step surface surrounding the edge termination region, and a dicing line surrounding the step surface. The active region has a first pn junction of a first semiconductor region and a second semiconductor layer and a second pn junction of an outer peripheral region and the second semiconductor layer. The step surface is provided with a first protective film for shielding light generated as forward current flows through the first and second pn junctions in the active region.
Claims21
A semiconductor device comprising:
- a semiconductor substrate made of a wide band gap semiconductor and having a first principal surface and a second principal surface;
- an active region provided in a central portion when viewed from the first principal surface side of the semiconductor substrate;
- an edge termination region provided to surround the active region;
- and
- a dicing line provided to surround the edge termination region,
- wherein the active region has at least one junction of different conductivity types having a first conductivity type region and a second conductivity type region,
- wherein a step surface provided on the first principal surface side between the edge termination region and the dicing line so as to be on the second principal surface side with respect to the junction of different conductivity types is provided, and
- wherein the step surface is covered with a first protective film having a low light transmittance.
Dependencies are inferred from the claim text.