Back to results
US 2024/0404889 A1Published application
Semiconductor device and methods of formation
AssigneeTaiwan Semiconductor Manufacturing Compant Ltd.
InventorsShih-Sian TU, Yu-Jen CHEN, Jhen-Wei CHEN
Life of this patent
Estimating the term…
Abstract
A non-active gate structure is formed over a shallow trench isolation (STI) region that is adjacent to at least one fin structure of a semiconductor device that includes a fin-based transistor. The non-active gate structure includes at least one support structure that extends from the gate in a direction that is approximately orthogonal to the direction in which the main body of the non-active gate structure extends. The support structure provides structural support for the non-active gate structure, which increases the stability of the non-active gate structure relative to a gate structure that does not include the support structure.
Claims20
A semiconductor device, comprising:
- one or more fin structures extending above a substrate,
- wherein the one or more fin structures extend in a first direction in a top-down view of the semiconductor device;
- an active gate structure that wraps around the one or more fin structures on at least three sides of the one or more fin structures,
- wherein the active gate structure extends in a second direction, in the top-down view of the semiconductor device, that is approximately perpendicular with the first direction;
- and
- a non-active gate structure on a shallow trench isolation (STI) region,
- wherein the non-active gate structure is adjacent to ends of the one or more fin structures, and
- wherein the non-active gate structure comprises:
- a main body that extends in the second direction;
- and
- one or more support structures that extend from the main body in the first direction.
8 more elements
A method, comprising:
- forming a plurality of fin structures in a substrate of a semiconductor device,
- wherein the plurality of fin structures extend in a first direction in a top-down view of the semiconductor device;
- forming a shallow trench isolation (STI) region on the substrate between the plurality of fin structures and adjacent to ends of the plurality of fin structures,
- wherein the plurality of fin structures extend above the STI region;
- forming one or more dummy gate layers on the STI region and around the plurality of fin structures;
- etching the one or more dummy gate layers based on a pattern to form:
- one or more first dummy gate structures that extend in a second direction, in the top-down view of the semiconductor device, that is approximately perpendicular with the first direction,
- wherein the one or more first dummy gate structures wrap around the plurality of fin structures on at least three sides of the plurality of fin structures;
- and
- one or more second dummy gate structures that extend in the second direction and are located on the STI region adjacent to ends of the plurality of fin structures,
- wherein the one or more second dummy gate structures comprise:
- a main body that extends in the second direction;
- and
- one or more support structures that extend from the main body in the first direction.
11 more elements
A semiconductor device, comprising:
- one or more first fin structures extending above a substrate,
- wherein the one or more first fin structures extend in a first direction in a top-down view of the semiconductor device;
- a first active gate structure that wraps around the one or more first fin structures on at least three sides of the one or more first fin structures,
- wherein the first active gate structure extends in a second direction, in the top-down view of the semiconductor device, that is approximately perpendicular with the first direction;
- and
- a first non-active gate structure on a shallow trench isolation (STI) region,
- wherein the first non-active gate structure is adjacent to ends of the one or more first fin structures, and
- wherein the first non-active gate structure comprises:
- a first main body that extends in the second direction;
- and
- one or more first support structures that extend from the first main body in the first direction;
- one or more second fin structures extending above the substrate,
- wherein the one or more second fin structures extend in the first direction;
- a second active gate structure that wraps around the one or more second fin structures on at least three sides of the one or more second fin structures,
- wherein the second active gate structure extends in the second direction;
- and
- a second non-active gate structure on the STI region and adjacent to the first non-active gate structure,
- wherein the second non-active gate structure is adjacent to ends of the one or more second fin structures, and
- wherein the second non-active gate structure comprises:
- a second main body that extends in the second direction;
- and
- one or more second support structures that extend from the second main body in the first direction.
19 more elements
Dependencies are inferred from the claim text.