Semiconductor device and manufacturing method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChun-Yen LIN, Wei-Cheng LIN, Jiann-Tyng TZENG
Life of this patent
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Abstract
A method includes: forming a first channel structure through a first gate structure; forming a first source/drain structure coupled to the first channel structure at a first surface of the first gate structure; before the first source/drain structure is formed, forming a first isolation layer at a second surface of the first gate structure to isolate the first channel structure; and after the first source/drain structure is formed, forming a first insulation structure at a position of the first isolation layer. The first surface and the second surface are opposite to each other, and a size of the first insulation structure is equal to or larger than a size of the first source/drain structure.
Claims20
A method, comprising:
- forming a first channel structure through a first gate structure;
- forming a first source/drain structure coupled to the first channel structure at a first surface of the first gate structure;
- before the first source/drain structure is formed, forming a first isolation layer at a second surface of the first gate structure to isolate the first channel structure;
- and
- after the first source/drain structure is formed, forming a first insulation structure at a position of the first isolation layer,
- wherein the first surface and the second surface are opposite to each other, and
- a size of the first insulation structure is equal to or larger than a size of the first source/drain structure.
A semiconductor device, comprising:
- a first gate structure;
- a first channel structure surrounded by the first gate structure;
- a first source/drain structure coupled to the first channel structure at a first surface of the first gate structure;
- a second source/drain structure coupled to the first channel structure at a second surface of the first gate structure, and configured to operate as a first transistor with the first gate structure and the first source/drain structure;
- a second channel structure surrounded by the first gate structure;
- a third source/drain structure coupled to the first channel structure at the first surface;
- and
- a first insulation structure formed at the second surface and having a size equal to or larger than a size of the third source/drain structure.
A method, comprising:
- forming a substrate, a first gate structure and a second gate structure arranged in order along a first direction;
- forming a first channel structure and a second channel structure which are coupled to the first gate structure and the second gate structure, respectively;
- forming an isolation layer at a first boundary of the first channel structure, to isolate the first boundary during an epitaxial growth process;
- and
- forming a first source/drain structure from a second boundary of the first channel structure by the epitaxial growth process.
Dependencies are inferred from the claim text.