Semiconductor devices and methods of manufacture

A semiconductor device comprising:

• a conductive material extending through a stack of materials, the stack of materials comprising:
• an etch stop layer;
• a first hard mask material;
• and
• an interlayer dielectric;
• a first treated region within the interlayer dielectric, the first treated region having a first composition of materials, the first composition of materials comprising dopants;
• a second treated region within the etch stop layer, the second treated region having a second composition of materials different from the first composition of materials;
• a third treated region within the first hard mask material, the third treated region having a third composition of materials different from the first composition of materials and the second composition of materials;
• and
• a fourth treated region within a conductive portion of a gate stack, wherein the fourth treated region has a higher concentration of a first dopant than the first treated region.

A semiconductor device comprising:

• a gate stack over a semiconductor fin;
• a first hard mask material overlying the gate stack, the first hard mask material comprising a first treated region;
• an etch stop layer overlying the first hard mask material, the etch stop layer comprising a second treated region;
• a dielectric layer overlying the etch stop layer, the dielectric layer comprising a third treated region;
• and
• a conductive material extending through and in physical contact with the first treated region, the second treated region, and the third treated region, wherein the conductive material is also in physical contact with a fourth treated region located within the gate stack.