Method of manufacturing semiconductor device
AssigneeSK hynix Inc.
InventorsDong Hun LEE, Jeong Hwan KIM, Mi Seong PARK, Jung Shik JANG, Won Geun CHOI
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Abstract
A method of manufacturing a semiconductor device is provided. The method may include forming a stack, forming a preliminary stepped structure by patterning the stack, forming a first stepped structure, a second stepped structure, and an opening located between the first stepped structure and the second stepped structure by etching the preliminary stepped structure, forming a passivation layer that fills the opening and covers the first stepped structure, and forming a third stepped structure by etching the second stepped structure using the passivation layer as an etching barrier.
Claims1
A method of manufacturing a semiconductor device, comprising:
- forming a stack that includes a first sub-stack structure and a second sub-stack structure that are sequentially stacked;
- forming a first stepped structure by patterning the first sub-stack structure and forming a second stepped structure by patterning the second sub-stack structure such that a non-stepped region is located between the first stepped structure and the second stepped structure;
- forming an opening that passes through the stack in the non-stepped region;
- forming a passivation layer that fills the opening and covers the first stepped structure;
- and
- forming a third stepped structure by etching the second stepped structure using the passivation layer as an etching barrier,
- wherein the second stepped structure is located at a lower level than the first stepped structure and the third stepped structure is located at a lower level than the second stepped structure.
Dependencies are inferred from the claim text.