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US 2024/0404873 A1Published application
Integrated circuit chip comprising a radiofrequency component
AssigneeSTMicroelectronics International N.V.
InventorsPascal Chevalier, Siddhartha Dhar, Frederic Monsieur
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Abstract
The present description concerns an integrated circuit chip including a semiconductor substrate and a radiofrequency component arranged inside and on top of an active region of the semiconductor substrate. The semiconductor substrate includes an amorphous buried layer in contact, by its upper surface, with a lower surface of the active region of the semiconductor substrate.
Claims21
An integrated circuit chip comprising:
- a semiconductor substrate;
- and
- a radiofrequency component arranged inside and on top of an active region of the semiconductor substrate, the semiconductor substrate comprising an amorphous buried layer in contact, by its upper surface, with a lower surface of the active region of the semiconductor substrate.
A method of manufacturing an integrated circuit chip, the method comprising:
- forming a radiofrequency component inside and on top of an active region of a semiconductor substrate;
- and
- forming, in the semiconductor substrate, an amorphous buried layer in contact, by its upper surface, with a lower surface of the active region of the semiconductor substrate.
A method of manufacturing an integrated circuit chip, the method comprising:
- forming a radiofrequency (RF) component at a first side of a semiconductor substrate, the semiconductor substrate comprising the first side and an opposite second side, the RF component comprising a device region and a trench isolation region laterally surrounding the device region;
- thinning the semiconductor substrate from the second side to form a thinned substrate;
- and
- locally forming a buried isolation layer by ion implantation, the buried isolation layer aligned with the trench isolation region.
1 more element
Dependencies are inferred from the claim text.