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US 2024/0404872 A1Published application
Direct n/p local interconnect
AssigneeQUALCOMM Incorporated
InventorsJunjing BAO, Haining YANG, Ming-Huei LIN
Life of this patent
Estimating the term…
Abstract
Disclosed are devices that include a direct N/P local interconnect with minimal recess on shallow trench isolation (STI) oxide. This reduces undesirable coupling capacitance with active gate, which in turn improves AC performance of the device. Pull or even partial replacement of STI oxide with low-k dielectric can further reduce coupling capacitance.
Claims21
A device, comprising:
- a shallow trench isolation (STI) oxide formed on a substrate;
- an N contact formed within the STI oxide and on the substrate on a first side of the device;
- an N source/drain formed on the N contact;
- a P contact formed within the STI oxide and on the substrate on a second side of the device;
- a P source/drain formed on the P contact;
- and
- a local interconnect formed on the STI oxide, the N source/drain, and the P source/drain, the local interconnect electrically coupling the N source/drain and the P source/drain,
- wherein a local interconnect recess depth is less than a local interconnect N depth, or the local interconnect recess depth is less than a local interconnect P depth, or both,
- the local interconnect N depth being a depth of a first region of the local interconnect above the N contact,
- the local interconnect P depth being a depth of a second region of the local interconnect above the P contact, and
- the local interconnect recess depth being a depth of a recess region of the local interconnect in between the first and second regions.
8 more elements
A method of fabricating a device, the method comprising:
- forming a shallow trench isolation (STI) oxide on a substrate;
- forming an N contact within the STI oxide and on the substrate on a first side of the device;
- forming an N source/drain on the N contact;
- forming a P contact within the STI oxide and on the substrate on a second side of the device;
- forming a P source/drain on the P contact;
- and
- forming a local interconnect on the STI oxide, the N source/drain, and the P source/drain, the local interconnect electrically coupling the N source/drain and the P source/drain,
- wherein a local interconnect recess depth is less than a local interconnect N depth, or the local interconnect recess depth is less than a local interconnect P depth, or both,
- the local interconnect N depth being a depth of a first region of the local interconnect above the N contact,
- the local interconnect P depth being a depth of a second region of the local interconnect above the P contact, and
- the local interconnect recess depth being a depth of a recess region of the local interconnect in between the first and second regions.
8 more elements
Dependencies are inferred from the claim text.