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US 2024/0404860 A1Published application
Plasma processing apparatus and method
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChun-Fu Kuo, Bing-Hung Chen, Li-Te Lin, Hao-Heng Liu
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Abstract
Processing apparatuses and methods are provided. A processing apparatus includes an electrostatic chuck configured to hold a semiconductor wafer during a process performed on the semiconductor wafer; a first electrode configured to bias a first region of the electrostatic chuck with a first bias; and a second electrode configured to bias a second region of the electrostatic chuck with a second bias.
Claims20
A processing apparatus comprising:
- an electrostatic chuck configured to hold a semiconductor wafer during a process performed on the semiconductor wafer;
- a first electrode configured to bias a first region of the electrostatic chuck with a first bias;
- and
- a second electrode configured to bias a second region of the electrostatic chuck with a second bias.
1 more element
A plasma processing apparatus comprising:
- a plasma chamber configured to receive a semiconductor wafer for a plasma process;
- and
- an electrostatic chuck disposed in the plasma chamber, wherein the electrostatic chuck has an upper surface configured to support the semiconductor wafer during the plasma process, wherein the upper surface includes a first region configured to apply a first bias to the semiconductor wafer, and wherein the upper surface includes a second region configured to apply a second bias to the semiconductor wafer.
A method for plasma processing comprising:
- supporting a workpiece with an electrostatic chuck;
- igniting a plasma over the workpiece;
- and
- directing a direction of ion flow by applying a first bias to a first region of the electrostatic chuck and applying a second bias to a second region of the electrostatic chuck.
1 more element
Dependencies are inferred from the claim text.