Redistribution layer metallic layout structure and method with warpage reduction

A method, comprising:

• receiving an integrated circuit (IC) layout of a semiconductor structure that includes a redistribution layout (RDL) structure having a plurality of RDL metallic features formed in a passivation layer over a semiconductor substrate, wherein the RDL metallic features include first conductive features longitudinally oriented along a first direction X and second conductive features longitudinally oriented along a second direction Y being orthogonal to the first direction X;
• determining criteria according to manufacturing data, wherein the criteria include a first criterion associated with a X-Y ratio gap and a second criterion associated with an average spacing of the RDL metallic features, wherein the X-Y ratio gap is defined as a difference between a first duty ratio of the first conductive features and a second duty ratio of the second conductive features;
• modifying the IC layout such that the modified RDL structure satisfies the first and second criteria;
• and
• generating a tape-out according to the modified IC layout.

A semiconductor structure, comprising:

• semiconductor devices formed on a semiconductor substrate;
• an interconnect structure disposed on the semiconductor devices;
• and
• a redistribution layout (RDL) structure disposed over the semiconductor substrate, wherein
• the RDL structure includes a plurality of RDL metallic features embedded in a passivation layer,
• the RDL metallic features include first conductive features longitudinally oriented along a first direction X and second conductive features longitudinally oriented along a second direction Y being orthogonal to the first direction X,
• a X-Y ratio gap defined as a difference between a first duty ratio of the first conductive features and a second duty ratio of the second conductive features, and
• the X-Y ratio gap is less than 1.