Chambers and coatings for reducing backside damage

A semiconductor processing platform comprising:

• a first chamber configured to:
• form a plasma of a carbon-containing material;
• deposit a carbon-containing material on a backside of a substrate, wherein a front side of the substrate is maintained substantially free of carbon-containing material;
• and
• remove the carbon-containing material from the backside of the substrate;
• a second chamber configured to:
• perform an etch process on the front side of the substrate;
• and
• a transfer mechanism configured to:
• transfer the substrate from the first chamber to the second chamber after the carbon-containing material is deposited on the backside of the substrate and before the carbon-containing material is removed from the backside of the substrate;
• and
• transfer the substrate from the second chamber back to the first chamber after the etch process is performed and before the carbon-containing material is removed from the backside of the substrate.