Etching methods using silicon-containing hydrofluorocarbons
AssigneeL'Air Liquide, Societe Anonyme pour I'Etude et I'Exploitation des Procedes Georges Claude
InventorsNicolas GOSSET, Vladislav GAMALEEV, Tomo HASEGAWA
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Abstract
Methods of plasma dry etching employing an etching gas mixture containing a compound that has a general formula: where 1≤x≤6, 1≤y≤9, 1≤z≤15, n=1 or 2. In some embodiments, the compound contains one or more methyl group(s) and at least one methyl group is attached to the Si atom. The methods include HAR dry etching processes. selective dry etching processes and cyclic selective dry etching processes.
Claims32
An etching method for forming an aperture in a substrate, the method comprising:
- mounting the substrate on a mounting table in a reactor, the substrate including a Si-containing film deposited thereon and a patterned mask layer deposited on the Si-containing film;
- introducing an etching gas containing a vapor of a Si-containing hydrofluorocarbon into the reactor;
- converting the etching gas into a plasma;
- and
- allowing an etching reaction to proceed between the plasma and the Si-containing film so that the Si-containing film is etched versus the patterned mask layer, thereby forming the aperture.
An etching method for forming an aperture in a substrate, the method comprising:
- mounting the substrate on a mounting table in a reactor, the substrate having a silicon-containing film deposited thereon and a patterned mask layer deposited on the silicon-containing film;
- introducing an etching gas containing C5H9F5Si into the reactor;
- converting the etching gas into a plasma;
- and
- allowing an etching reaction to proceed between the plasma and the silicon-containing film so that the silicon-containing film is etched versus the patterned mask layer forming the aperture.
An etching method for forming an aperture in a substrate, the method comprising:
- mounting the substrate on a mounting table in a reactor, the substrate having a silicon-containing film deposited thereon and a patterned mask layer deposited on the silicon-containing film;
- introducing an etching gas containing C4H9F3Si into the reactor;
- converting the etching gas into a plasma;
- and
- allowing an etching reaction to proceed between the plasma and the silicon-containing film so that the silicon-containing film is etched versus the patterned mask layer forming the aperture.
An etching method for forming an aperture in a substrate, the method comprising:
- mounting the substrate on a mounting table in a reactor, the substrate having a silicon-containing film deposited thereon and a patterned mask layer deposited on the silicon-containing film;
- introducing an etching gas containing CH3F3Si into the reactor;
- converting the etching gas into a plasma;
- and
- allowing an etching reaction to proceed between the plasma and the silicon-containing film so that the silicon-containing film is etched versus the patterned mask layer forming the aperture.
An etching method for forming an aperture in a substrate, the method comprising:
- mounting the substrate on a mounting table in a reactor, the substrate having a silicon-containing film deposited thereon and a patterned mask layer deposited on the silicon-containing film;
- introducing an etching gas containing C2H6F2Si into the reactor;
- converting the etching gas into a plasma;
- and
- allowing an etching reaction to proceed between the plasma and the silicon-containing film so that the silicon-containing film is etched versus the patterned mask layer forming the aperture.
An etching gas composition suitable for use in semiconductor etching reactions, the etching gas composition comprising:
- a first etchant vapor being a Si-containing hydrofluorocarbon selected from the formula CxHyFzSin, where 1≤x≤6, 1≤y≤9, 1≤z≤15, n=1 or 2.
Dependencies are inferred from the claim text.