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US 2024/0404830 A1Published application
Seam free titanium nitride gapfill
AssigneeApplied Materials, Inc.
InventorsRadhika P. Patil, Tatsuya E. Sato, Haoyan Sha, Abinash Tripathy, Michael S. Jackson, Janardhan Devrajan
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Abstract
Embodiments of the disclosure relate to methods of depositing seam-free gapfill. In some embodiments, the gapfill consists of titanium nitride. The gapfill methods comprise forming a first layer and a second layer. The firs layer is formed without treatment or densification, while the second layer is formed with periodic treatment. The resulting gapfill in advantageously seam-free.
Claims20
A method of depositing titanium nitride gapfill, the method comprising:
- depositing a first TiN layer by exposing a substrate surface with at least one feature therein to a titanium amide precursor;
- and
- depositing a second TiN layer by exposing the first TiN layer to a titanium precursor and a nitrogen-containing plasma,
- wherein the first and second TiN layers combine to fill the at least one feature with a TiN gapfill material which is substantially free of any defects.
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A method of depositing titanium nitride gapfill, the method comprising:
- depositing a first TiN layer by thermal decomposition by exposing a substrate surface with at least one feature therein to TDMAT, the first TiN layer being amorphous;
- and
- depositing a second TiN layer by exposing the first TiN layer to a plurality of cycles comprising a deposition phase and treatment phase, the deposition phase comprising TDMAT, the treatment phase comprising a nitrogen-containing plasma,
- wherein the first and second TiN layers combine to fill the at least one feature with a substantially crystalline TiN gapfill material which is substantially free of any defects.
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Dependencies are inferred from the claim text.