Method for improving dopant activation rate and structure created by means of said method
AssigneesKwansei Gakuin Educational Foundation, Toyota Tsusho Corporation
InventorsTadaaki KANEKO, Kiyoshi KOJIMA
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Abstract
An object of the present invention is to provide a novel technique for improving an activation rate of dopant of an epitaxial layer. Another object of the present invention is to provide a novel technique for suppressing variation in activation rate of dopant in the epitaxial layer. The present invention is a method for improving the activation rate of dopant of an epitaxial layer 20, including a growth step S10 of growing the epitaxial layer 20 having the dopant on a bulk layer 10 under an equilibrium vapor pressure environment.
Claims16
A method for improving an activation rate of dopant of an epitaxial layer, comprising a growth step of growing the epitaxial layer on a bulk layer under an equilibrium vapor pressure environment.
A semiconductor substrate comprising:
- a bulk layer;
- and
- an epitaxial layer grown on top of the bulk layer, wherein
- the epitaxial layer has a higher activation rate of dopant than that of the bulk layer.
A semiconductor device comprising:
- a bulk layer;
- and
- an epitaxial layer having a higher activation rate of dopant than the bulk layer.
Dependencies are inferred from the claim text.