Method of processing substrate, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
AssigneeKokusai Electric Corporation
InventorsAtsushi Moriya, Toshiyuki Kikuchi, Naofumi Ohashi
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Abstract
There is provided a technique that includes: (a) mounting a substrate on a mounting stage in which at least a part of a surface is constituted by a first member; (b) forming films by supplying a first gas, the films including a first film formed on a surface of the substrate and a second film having a portion continuous with the first film and formed on a surface of the first member; and (c) generating stress attributable to a difference in thermal deformation amount between the first member and the substrate, inside the second film, and making at least a part of the second film discontinuous.
Claims19
A method of processing a substrate, comprising:
- (a) mounting the substrate on a mounting stage in which at least a part of a surface is constituted by a first member;
- (b) forming films by supplying a first gas, the films including a first film formed on a surface of the substrate and a second film having a portion continuous with the first film and formed on a surface of the first member;
- and
- (c) generating stress attributable to a difference in thermal deformation amount between the first member and the substrate, inside the second film, and making at least a part of the second film discontinuous.
A substrate processing apparatus comprising:
- a mounting stage in which at least a part of a surface is constituted by a first member;
- a film forming mechanism configured to form films, the films including a first film formed on a surface of a substrate mounted on the mounting stage and a second film having a portion continuous with the first film and formed on a surface of the first member;
- a temperature adjusting mechanism configured to change a temperature of at least one of the substrate and the mounting stage;
- and
- a controller configured to be capable of controlling the film forming mechanism and the temperature adjusting mechanism so as to perform a process including:
- (a) mounting the substrate on the mounting stage;
- (b) forming films, the films including a first film formed on a surface of the substrate and a second film having a portion continuous with the first film and formed on a surface of the first member;
- and (c) generating stress attributable to a difference in thermal deformation amount between the first member and the substrate, inside the second film, and making at least a part of the second film discontinuous.
A non-transitory computer-readable recording medium storing a program that causes, by a computer, a substrate processing apparatus to perform:
- (a) mounting a substrate on a mounting stage in which at least a part of a surface is constituted by a first member;
- (b) forming films by supplying a first gas, the films including a first film formed on a surface of the substrate and a second film having a portion continuous with the first film and formed on a surface of the first member;
- and
- (c) generating stress attributable to a difference in thermal deformation amount between the first member and the substrate, inside the second film, and making at least a part of the second film discontinuous.
Dependencies are inferred from the claim text.