Wafer processing apparatus using plasma phase shift

A wafer processing system using plasma, the system comprising:

• a first reaction chamber, a second reaction chamber, a third reaction chamber, and a fourth reaction chamber disposed on a platform, each of them being configured to process wafers;
• a plasma generator coupled to the first/second/third/fourth reaction chambers individually and configured to generate a plasma with a certain frequency and a certain phase, and further configured to provide the generated plasma to the first reaction chamber, the second reaction chamber, the third reaction chamber and the fourth reaction chamber;
• and
• a control circuit connected to the plasma generator and configured to adjust the phase of the plasma generated by the plasma generator;
• wherein, the control circuit is further configured to shift the phase of the generated plasma provided to the first reaction chamber, the second reaction chamber, the third reaction chamber, and the fourth reaction chamber, independently.