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AssigneeNissin Ion Equipment Co., Ltd.
InventorsYuya HIRAI, Weijiang Zhao, Shunsuke Omura, Akihito Nakanishi, Takumi Sato
Estimating the term…
An ion implanter includes an angle measurement apparatus that measures a first angle of an ion beam in a first direction and a second angle of the ion beam in a second direction, the first direction and the second direction being mutually orthogonal to a traveling direction of the ion beam, an angle corrector that is located in a beamline of the ion beam and corrects an angle of the ion beam in the first direction based on the first angle, a wafer holder that holds a wafer in a process chamber, a tilt device that is connected to the wafer holder and that rotates the wafer around a rotation axis parallel to the first direction, and a controller that controls the tilt device based on the second angle, crystal axis information of the wafer, and implantation recipe information.
An ion implanter comprising:
on implanter as recited in claim 1, wherein the ion beam is a spot beam that is scanned in the first direction and the angle corrector is a collimator that deflects the scanned spot beam.
The ion implanter as recited in claim 2, wherein the wafer holder comprises an electrostatic chuck that holds a lower surface of the wafer.
The ion implanter as recited in claim 2, further comprising:
on implanter as recited in claim 7, wherein the adsorption member is an electrostatic chuck.
An ion implantation method comprising:
An ion implanter comprising:
Dependencies are inferred from the claim text.