Capacitor and method of forming the same

A method of forming a capacitor, comprising:

• providing a substrate;
• etching the substrate including a center area and a peripheral area surrounding the center area to form a plurality of active parts in the center area and the peripheral area, and first grooves between adjacent active parts;
• forming an electrode structure on the surface of the substrate, in the first grooves, and on the top surface of each of the plurality of active parts, the electrode structure including a first insulation layer, a first electrode plate, a second insulation layer, and a second electrode plate that are stacked in sequence;
• forming one or more first openings in the electrode structure in the peripheral area exposing a part of the top surface of each of the plurality of active parts;
• forming one or more second openings in the second electrode plate and the second insulation layer in the peripheral area exposing a part of the surface of the first electrode plate;
• and
• forming a plurality of first plugs in the one or more first openings and a plurality of second plugs in the one or more second openings.