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US 2024/0404610 A1Published application
Read operations with offset for slow charge loss
AssigneeMicron Technology, Inc.
InventorKyungjin Kim
Life of this patent
Estimating the term…
Abstract
Apparatuses and methods for performing read operations using an offset based upon slow charge loss characteristics are provided. One example apparatus can include a controller configured to apply a read voltage to a word line in the array of memory cells during a read operation on the word line, wherein the read voltage includes an offset associated with a slow charge loss characteristic of the word line.
Claims20
An apparatus, comprising:
- an array of memory cells;
- a controller coupled to the array of memory cells and the controller is configured to:
- apply a read voltage to a word line in the array of memory cells during a read operation on the word line, wherein the read voltage includes an offset associated with a slow charge loss characteristic of the word line.
An apparatus, comprising:
- an array of memory cells;
- and
- a controller coupled to the array of memory cells and the controller is configured to:
- apply a first read voltage to a first word line in the array of memory cells during a read operation on the word line, wherein the first read voltage is associated with a first read level of the read operation and the read voltage includes a first offset associated with the word line;
- and
- apply a second read voltage to the first word line in the array of memory cells during the read operation on the word line, wherein the second read voltage is associated with a second read level of the read operation and the second read voltage includes a second offset associated with the word line.
3 more elements
A method, comprising:
- performing a read operation upon a word line in a memory array
- wherein performing the read operation includes:
- applying a first read voltage to a first word line in the array of memory cells during a read operation on the word line, wherein the first read voltage is associated with a first read level of the read operation and the read voltage includes a first offset associated with the word line;
- and
- applying a second read voltage to the first word line in the array of memory cells during the read operation on the word line, wherein the second read voltage is associated with a second read level of the read operation and the second read voltage includes a second offset associated with the word line.
2 more elements
Dependencies are inferred from the claim text.