Memory device and method of operating the memory device

Abstract

An embodiment of the present technology includes a memory device and a method of operating the memory device. The memory device includes a memory block, a peripheral circuit configured to increase a threshold voltage of memory cells selected among memory cells included in the memory block according to logic data, detect low-level cells having a threshold voltage higher than a reference voltage among memory cells having a threshold voltage lower than a verify voltage at a first time within a verify time set according the number of bits included into the logic data, and detect high-level cells having a threshold voltage higher than the verify voltage at a second time after the first time, and a control circuit configured to control the peripheral circuit in response to a command.

Dependencies are inferred from the claim text.