Determining offsets for memory read operations

A memory system, comprising:

• one or more memory arrays;
• and
• processing circuitry coupled with the one or more memory arrays and configured to cause the memory system to:
• perform a first plurality of read operations on a block of the one or more memory arrays using a reference voltage and an offset value;
• determine that a quantity of successful read operations of the first plurality of read operations exceeds a threshold quantity, wherein the quantity of successful read operations comprises read operations that are successfully performed using the reference voltage and the offset value;
• and
• perform, in accordance with the quantity of successful read operations exceeding the threshold quantity, a second plurality of read operations on the block of the one or more memory arrays using the reference voltage and a fixed offset value that is in accordance with the offset value.

A memory system, comprising:

• one or more memory arrays;
• and
• processing circuitry coupled with the one or more memory arrays and configured to cause the memory system to:
• perform a first plurality of read operations on a block of the one or more memory arrays using one or more first offset values;
• determine a fixed offset value to use as a baseline offset for a second plurality of read operations in accordance with results of the first plurality of read operations and the one or more first offset values;
• and
• perform the second plurality of read operations on the block of the one or more memory arrays using the fixed offset value.

A non-transitory computer-readable medium storing code comprising instructions which, when executed by processing circuitry of an electronic device, cause the electronic device to:

• perform a first plurality of read operations on a block of a memory array using a reference voltage and an offset value;
• determine that a quantity of successful read operations of the first plurality of read operations exceeds a threshold quantity, wherein the quantity of successful read operations comprises read operations that are successfully performed using the reference voltage and the offset value;
• and
• perform, in accordance with the quantity of successful read operations exceeding the threshold quantity, a second plurality of read operations on the block of the memory array using the reference voltage and a fixed offset value that is in accordance with the offset value.