US 2024/0404599 A1 · MEMORY DEVICE RELATED TO PERFORMING A READ OPERATION AND METHOD OF OPERATING THE MEMORY DEVICE

Abstract

The present technology relates to a semiconductor device. In an embodiment, a memory device capable of reducing a time required for a read operation and preventing an HCI phenomenon of a memory cell may include a plurality of voltage regulators configured to generate operation voltages applied to a word line group, a switch control signal generator configured to generate at least one switch control signal controlling to connect or disconnect at least one voltage regulator among the plurality of voltage regulators to or from the word line group, and a plurality of switching circuits each is connected to any one voltage regulator among the plurality of voltage regulators, and connecting the plurality of voltage regulator to the word line group according to the switch control signal in a period in which a pass voltage among the operation voltages is applied to the word line group during a read operation.

Claims16

Dependent claims

A memory device comprising:

a plurality of voltage regulators configured to generate operation voltages applied to a word line group;
a switch control signal generator configured to generate at least one switch control signal controlling to connect or disconnect at least one voltage regulator among the plurality of voltage regulators to or from the word line group;
and
a plurality of switching circuits each connected to any one voltage regulator among the plurality of voltage regulators, and connecting the plurality of voltage regulator to the word line group according to the switch control signal in a period in which a pass voltage among the operation voltages is applied to the word line group during a read operation.

1 more element

A memory device comprising:

a first voltage regulator configured to generate operation voltages applied to a first word line group;
a second voltage regulator configured to generate the operation voltages applied to a second word line group;
a first switching circuit group connected to the first word line group, the first voltage regulator, and the second voltage regulator;
a second switching circuit group connected to the second word line group, the first voltage regulator, and the second voltage regulator;
and
a switch control signal generator configured to generate a switch control signal controlling the first switching circuit group and the second switching circuit group to apply a first pass voltage generated by the first voltage regulator and the second voltage regulator to the first word line group and the second word line group, in a period in which a pass voltage among the operation voltages is applied to the first word line group and the second word line group.

3 more elements

Dependencies are inferred from the claim text.

Memory device related to performing a read operation and method of operating the memory device

Life of this patent

Memory device related to performing a read operation and method of operating the memory device

Life of this patent

Abstract

Claims16