Memory devices and methods for decoding addresses thereof
AssigneeSamsung Electronics Co., Ltd.
InventorsSeungki Hong, Sanghak Shin
Life of this patent
Estimating the term…
Loading patent…
AssigneeSamsung Electronics Co., Ltd.
InventorsSeungki Hong, Sanghak Shin
Estimating the term…
A memory device, which may include: a memory cell array including a plurality of memory cell groups; an intermediate block configured to decode a row address, and configured to output an active block flag and a decoded row address; and a row decoder configured to select a wordline of a plurality of wordlines connected to the memory cell array based on the active block flag and the decoded row address. The row decoder may be configured to convert a portion of the row decoder from an inactive state to an active state to activate a selected memory cell group from among the plurality of memory cell groups based on a received active request, the selected memory group corresponding to the active block flag, and the row decoder may be configured to select the wordline connected to the selected memory cell group based on the decoded row address.
A memory device comprising:
A method of decoding an address of a memory device, the method comprising:
A memory device comprising:
Dependencies are inferred from the claim text.