User configurable slc memory size
AssigneeSK Hynix NAND Product Solutions Corp.
InventorsChace A. Clark, Francis Corrado
Life of this patent
Estimating the term…
Abstract
An embodiment of an electronic apparatus may include one or more substrates; and a controller coupled to the one or more substrates, the controller including logic to control access to a NAND-based storage media that includes a first cell region with a first number of levels and a second region with a second number of levels that is different from the first number of levels, determine logical block address locations that correspond to a user configurable capacity placeholder, and adjust respective sizes of the first cell region and the second cell region at runtime based on the logical block address locations. Other embodiments are disclosed and claimed.
Claims20
An electronic apparatus, comprising:
- NAND-based storage media that includes a first cell region with a first number of levels and a second cell region with a second number of levels that is different from the first number of levels;
- and
- a controller coupled to the NAND-based storage media, wherein the controller is configured to at least:
- determine logical block address locations that correspond to a capacity placeholder, and
- adjust respective sizes of the first cell region and the second cell region based on the logical block address locations.
An electronic storage system, comprising:
- non-volatile storage media that includes a first cell region with a first number of levels and a second cell region with a second number of levels that is different from the first number of levels;
- and
- a controller coupled to the non-volatile storage media, wherein the controller is configured to at least:
- determine logical block address locations that correspond to a capacity placeholder, and
- adjust respective sizes of the first cell region and the second cell region based on the logical block address locations.
A method of controlling storage, comprising:
- determining logical block address locations that correspond to a capacity placeholder, and
- adjusting respective sizes of a first cell region and a second cell region based on the logical block address locations,
- wherein the first cell region and the second cell region are included in non-volatile storage media, the first cell region has a first number of levels, and the second cell region has a second number of levels that is different from the first number of levels.
Dependencies are inferred from the claim text.