Composition For Forming Resist Underlayer Film And Patterning Process

Abstract

The present invention is a composition for forming a resist underlayer film used for a multilayer resist method contains (A) a resin, (B) a base generator, and (C) an organic solvent, wherein a weight-average molecular weight of (A) the resin is 3,000 to 10,000, (A) the resin is (A-1) a resin containing a phenolic hydroxyl group and a group obtained by modifying a phenolic hydroxyl group, or (A-2) a mixture of a resin containing a phenolic hydroxyl group and a resin containing a group obtained by modifying a phenolic hydroxyl group, and (A) the resin satisfies relations of a+b=1, 0.1≤a≤0.5, and 0.5≤b≤0.9, wherein “a” is a proportion of a phenolic hydroxyl group and “b” is a proportion of a group obtained by modifying a phenolic hydroxyl group contained in (A) the resin. This provides: a composition for forming a resist underlayer film having an excellent filling property and adhesiveness to a substrate, and a patterning process using thereof are to be provided.

Dependencies are inferred from the claim text.