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AssigneeTaiwan Color Optics, Inc.
InventorsCHIH-FENG WANG, KUO-YIN HUANG, WEN-YU WANG, Ke-Peng Chang, YUNG-PENG CHANG, Cheng-Wei Chu
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An infrared filter film layer and an infrared filter structure are provided. The infrared filter film layer includes at least one silicon-based layer, at least one isolation layer, and at least one oxide layer that are stacked with each other. The at least one isolation layer is disposed between the at least one silicon-based layer and the at least one oxide layer. Through this configuration, the infrared filter film layer has good quality, such that an amount of wavelength drift is small in application. The infrared filter structure includes a light-transmitting substrate and the infrared filter film layer.
An infrared filter film layer, comprising at least one silicon-based layer, at least one isolation layer, and at least one oxide layer that are stacked with each other, wherein the at least one isolation layer is disposed between the at least one silicon-based layer and the at least one oxide layer.
An infrared filter structure, comprising:
Dependencies are inferred from the claim text.