Composition, compound, resin, substrate treatment method, and manufacturing method for semiconductor device
AssigneeFUJIFILM Corporation
InventorsNaoya SHIMOJU, Yasuo SUGISHIMA, Tomonori TAKAHASHI
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Abstract
The present invention provides a composition for a semiconductor device, where the composition is such that the removability of residues is excellent and the dissolution of tungsten is further suppressed. The composition for a semiconductor device contains a resin having a repeating unit A derived from a polymerizable compound containing a nitrogen atom and water, where a ClogP of the polymerizable compound is 0.5 or more and a solubility of the resin in water at 25° C. is 0.01% by mass or more.
Claims22
A composition for a semiconductor device, comprising:
- a resin having a repeating unit A derived from a polymerizable compound containing a nitrogen atom;
- and
- water,
- wherein a ClogP of the polymerizable compound is 0.5 or more, and
- a solubility of the resin in water at 25° C. is 0.01% by mass or more.
A compound represented by Formula (1a),
- in the formula, Y's each independently represent a hydrogen atom or -L2-L3-NH2, provided that at least two Y's represent -L2-L3-NH2, L2 represents a single bond or an oxygen atom, and L3 represents an aliphatic hydrocarbon group having 1 to 5 carbon atoms.
A compound represented by Formula (1b),
- in the formula, Z's each independently represent a hydrogen atom or -L2-L3-OH, provided that at least two Z's represent -L2-L3-OH, L2 represents a single bond or an oxygen atom, and L3 represents an aliphatic hydrocarbon group having 1 to 5 carbon atoms.
Dependencies are inferred from the claim text.