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US 2024/0396526 A1Published application
Transversely-excited film bulk acoustic resonator with a back-side dielectric layer
AssigneeMurata Manufacturing Co., Ltd.
InventorPatrick TURNER
Life of this patent
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Abstract
A bulk acoustic resonator is provided that includes a substrate including a plurality of materials and a cavity disposed therein; a piezoelectric layer attached to the substrate by a first dielectric layer; an interdigital transducer (IDT) on a surface of the piezoelectric layer and having interleaved fingers on a portion of the piezoelectric layer that is over the cavity; and a second dielectric layer disposed over and between the interleaved fingers,
Claims20
A bulk acoustic resonator comprising:
- a substrate including a plurality of materials and a cavity disposed therein;
- a piezoelectric layer attached to the substrate by a first dielectric layer;
- an interdigital transducer (IDT) on a surface of the piezoelectric layer and having interleaved fingers on a portion of the piezoelectric layer that is over the cavity;
- and
- a second dielectric layer disposed over and between the interleaved fingers, wherein a sum of a thickness of the first dielectric layer and the second dielectric layer is less than
- 35% of a thickness of the piezoelectric layer.
3 more elements
A filter device comprising:
- a plurality of bulk acoustic wave resonators including a shunt resonator and a series resonator, wherein at least one of the plurality of bulk acoustic resonators comprises:
- a substrate including a plurality of materials and a cavity disposed therein;
- a piezoelectric layer attached to the substrate by a first dielectric layer;
- an interdigital transducer (IDT) on a surface of the piezoelectric layer and having interleaved fingers on a portion of the piezoelectric layer that is over the cavity;
- and
- a second dielectric layer disposed over and between the interleaved fingers,
- wherein a sum of a thickness of the first dielectric layer and the second dielectric layer is less than 35% of a thickness of the piezoelectric layer.
4 more elements
Dependencies are inferred from the claim text.