Semiconductor devices and methods of forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChan-Hong Chern, Min-Hsiang Hsu
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Abstract
Integrated optical devices and methods of forming the same are disclosed. A method of forming an integrated optical device includes the following steps. A substrate is provided. The substrate includes, from bottom to top, a first semiconductor layer, an insulating layer and a second semiconductor layer. The second semiconductor layer is patterned to form a waveguide pattern. A surface smoothing treatment is performed to the waveguide pattern until a surface roughness Rz of the waveguide pattern is equal to or less than a desired value. A cladding layer is formed over the waveguide pattern.
Claims20
A method of forming a semiconductor device, comprising:
- providing an insulating layer;
- forming a semiconductor pattern on the insulating layer and a mask pattern on a top surface of the semiconductor pattern;
- performing a cyclic oxidizing and etching process at least one time to a sidewall of the semiconductor pattern;
- forming a nitrided oxide layer on the semiconductor pattern;
- and
- removing the mask pattern.
A method of forming a semiconductor device, comprising:
- providing a substrate;
- forming a semiconductor pattern and a mask pattern on the substrate, wherein the semiconductor pattern comprises a first portion and a second portion extending laterally from the first portion, and the mask pattern is disposed on a top surface of the first portion;
- performing a smoothing process to the semiconductor pattern until a surface roughness Rz of a sidewall of the first portion is substantially equal to a surface roughness Rz of a top surface of the second portion;
- and
- forming an insulating layer on the sidewall of the first portion and on the top surface of the second portion.
A semiconductor device, comprising:
- a semiconductor pattern, disposed on a substrate, wherein the semiconductor pattern comprises a first portion and a second portion extending laterally from the first portion;
- and
- a cladding layer, disposed over the semiconductor pattern,
- wherein a surface roughness Rz of the sidewall of the first portion is substantially equal to a surface roughness Rz of a top surface of the second portion.
Dependencies are inferred from the claim text.