Back to results
US 2024/0393531 A1Published application
Photonic Device on a Semiconductor-on-Insulator Substrate and Method of Manufacturing Thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYueh Ying Lee, Tzu-Chung Tsai, Chien-Ying Wu, Jhih-Ming Lin
Life of this patent
Estimating the term…
Abstract
A method of fabricating a photonic device includes: forming a photonic device structure that includes a SOI substrate, which includes a bulk substrate layer, a buried oxide layer on the bulk substrate layer and an active semiconductor layer on the buried oxide layer; forming an electrically conducting layer in electrical contact of the buried oxide layer, and forming a BEOL structure on a surface of the active silicon layer.
Claims20
A photonic device comprising:
- a SOI substrate, wherein the SOI substrate comprises a buried oxide layer and an active semiconductor layer on the buried oxide layer;
- a BEOL structure over a surface of the active semiconductor layer;
- and
- a first electrically conducting layer in electrical contact with a first portion of the buried oxide layer and a second electrically conducting layer in electrical contact with a second portion of the buried oxide layer, wherein the second portion of the buried oxide layer is opposite to the first portion of the buried oxide layer in a direction parallel to the surface of the active semiconductor layer.
1 more element
A photonic device, comprising
- an SOI substrate, wherein the SOI substrate comprises a bulk substrate layer, a buried oxide layer on the bulk substrate layer and an active semiconductor layer on the buried oxide layer;
- an electrically conducting layer in electrical contact with the buried oxide layer;
- a BEOL structure on a surface of the active silicon layer;
- an optical waveguide patterned in the active semiconductor layer;
- and
- a fiber optic material extending through insulating layers of the BEOL structure towards the optical waveguide.
3 more elements
A photonic device, comprising
- an SOI substrate, wherein the SOI substrate comprises a bulk substrate layer having a first surface and a second surface opposite to the first surface, a buried oxide layer on the first surface of the bulk substrate layer and an active semiconductor layer on the buried oxide layer, the buried oxide layer is not the second surface of the bulk substrate layer;
- an electrically conducting layer in electrical contact with the buried oxide layer;
- and
- a BEOL structure on a surface of the active silicon layer.
1 more element
Dependencies are inferred from the claim text.